| Част Не | Производител | Заявление |
|---|
| SR401 | Polyfet RF | 300 Watt, silicon gate enhancement mode RF power VDMOS transistor |
| P123 | Polyfet RF | 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor |
| F1074 | Polyfet RF | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1516 | Polyfet RF | 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F2046 | Polyfet RF | 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| SH703 | Polyfet RF | 130 Watt, silicon gate enhancement mode RF power VDMOS transistor |
| F1066 | Polyfet RF | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| LX802 | Polyfet RF | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| LP701 | Polyfet RF | 35 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| L125 | Polyfet RF | 15 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| L2721 | Polyfet RF | 15 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| F2047 | Polyfet RF | 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| L8801P | Polyfet RF | 10 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| ST724 | Polyfet RF | 60 Watt, silicon gate enhancement mode RF power VDMOS transistor |
| LX803 | Polyfet RF | 45 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| F1001 | Polyfet RF | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1072 | Polyfet RF | 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F2012 | Polyfet RF | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| P121 | Polyfet RF | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor |
| LC401 | Polyfet RF | 60 Watt, silicon gate enhancement mode RF power LDMOS transistor |
| F2246 | Polyfet RF | 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1170 | Polyfet RF | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F2212 | Polyfet RF | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F5001 | Polyfet RF | 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1027 | Polyfet RF | 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1174 | Polyfet RF | 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1058 | Polyfet RF | 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1069 | Polyfet RF | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1222 | Polyfet RF | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
| F1214 | Polyfet RF | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor |
