F2047 спец.: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2047 Подобна

F2041
- 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2046
- 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2047
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2048
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2047 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 6

Температурата : Мин -65 °C | Макс 150 °C

Размер : 39 KB

Заявление : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor