F2012 спец.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Подобна

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 2

Температурата : Мин -65 °C | Макс 150 °C

Размер : 40 KB

Заявление : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor