P123 спец.: 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Подобна

P123
- 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Datasheet и Spec

Производител : Polyfet RF

Опаковка : SO-8

Pins : 8

Температурата : Мин -65 °C | Макс 150 °C

Размер : 41 KB

Заявление : 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor