F1214 спец.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Подобна

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 6

Температурата : Мин -65 °C | Макс 150 °C

Размер : 38 KB

Заявление : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor