F1174 спец.: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Подобна

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 49 KB

Заявление : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor