F1027 спец.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Подобна

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 43 KB

Заявление : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor