P121 спец.: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Подобна

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet и Spec

Производител : Polyfet RF

Опаковка : SO-8

Pins : 8

Температурата : Мин -65 °C | Макс 150 °C

Размер : 35 KB

Заявление : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor