F5001 спец.: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Подобна

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 2

Температурата : Мин -65 °C | Макс 150 °C

Размер : 40 KB

Заявление : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor