F1170 спец.: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Подобна

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 47 KB

Заявление : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor