F1066 спец.: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1066 Подобна

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- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1066 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 8

Температурата : Мин -65 °C | Макс 150 °C

Размер : 42 KB

Заявление : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor