WMBT5551LT1 спец.: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

WMBT5551LT1 Подобна

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WMBT5551LT1 Datasheet и Spec

Производител : WingShing

Опаковка : SOT-23

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 39 KB

Заявление : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V