Path:OKDatasheet > Полупроводникови Datasheet > WingShing Datasheet > WMBT5551LT1
WMBT5551LT1 спец.: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
Path:OKDatasheet > Полупроводникови Datasheet > WingShing Datasheet > WMBT5551LT1
WMBT5551LT1 спец.: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
Производител : WingShing
Опаковка : SOT-23
Pins : 3
Температурата : Мин 0 °C | Макс 0 °C
Размер : 39 KB
Заявление : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V