WMBT3904 спец.: NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

WMBT3904 Подобна

WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3904
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WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3906
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WMBT5401LT1
- PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
WMBT5551LT1
- NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
WMBTA42
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WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBT3904 Datasheet и Spec

Производител : WingShing

Опаковка : SOT-89

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 72 KB

Заявление : NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A