Path:OKDatasheet > Полупроводникови Datasheet > WingShing Datasheet > WMBT5401LT1
WMBT5401LT1 спец.: PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
Path:OKDatasheet > Полупроводникови Datasheet > WingShing Datasheet > WMBT5401LT1
WMBT5401LT1 спец.: PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
Производител : WingShing
Опаковка : SOT-23
Pins : 3
Температурата : Мин 0 °C | Макс 0 °C
Размер : 37 KB
Заявление : PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V