WMBT3906 спец.: PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

WMBT3906 Подобна

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WMBT3906
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WMBT3906 Datasheet и Spec

Производител : WingShing

Опаковка : SOT-89

Pins : 3

Температурата : Мин 0 °C | Макс 0 °C

Размер : 72 KB

Заявление : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A