| Част Не | Производител | Заявление |
|---|
| IRHN8230 | IR | HEXFET transistor |
| 302UF160AYPD | IR | Standard recovery diode |
| 301UA250P2 | IR | Standard recovery diode |
| SD103R12S20PC | IR | Fast recovery diode |
| ST230C14C2L | IR | Phase control thyristor |
| SD153N12S15MSV | IR | Fast recovery diode |
| SD500R40MTC | IR | Standard recovery diode |
| IRGPH50S | IR | Insulated gate bipolar transistor |
| ST280C04C3L | IR | Phase control thyristor |
| SD400N16PSV | IR | Standard recovery diode |
| IRFU214 | IR | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A |
| ST230C04C1 | IR | Phase control thyristor |
| IRF7507 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch. |
| ST180C16C1L | IR | Phase control thyristor |
| IRG4PC50S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A |
| 302UF160PD | IR | Standard recovery diode |
| SD1053C18S20L | IR | Fast recovery diode |
| IRF7204 | IR | P-channel MOSFET for fast switching applications, 20V, 5.3A |
| ST380CH06C0L | IR | Phase control thyristor |
| IRF1310NS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. |
| IRFP4710 | IR | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.014 Ohm, ID = 72 A |
| SD233R30S50MSC | IR | Fast recovery diode |
| SD203R14S15PBC | IR | Fast recovery diode |
| SD300R20PC | IR | Standard recovery diode |
| ST303C04LHK0 | IR | Inverter grade thyristor |
| ST230S04M1 | IR | Phase control thyristor |
| 300UFR120APD | IR | Standard recovery diode |
| 305URA200P4 | IR | Standard recovery diode |
| SD803C12S15C | IR | Fast recovery diode |
| ST173C10CHK2L | IR | Inverter grade thyristor |
