| Част Не | Производител | Заявление |
|---|
| ST280C06C1 | IR | Phase control thyristor |
| SD103N08S15PC | IR | Fast recovery diode |
| IRLML5203 | IR | P-channel power MOSFET, 30V, 3A |
| ST330C14C2 | IR | Phase control thyristor |
| 47LF160D | IR | Standard recovery diode |
| IRFP17N50LS | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.28 Ohm, ID = 16A, Trr = 170ns. |
| ST733C04LHK2 | IR | Inverter grade thyristor |
| ST280CH04C1L | IR | Phase control thyristor |
| SD203N04S20MSC | IR | Fast recovery diode |
| SD103R10S20PC | IR | Fast recovery diode |
| SD103N12S15PBC | IR | Fast recovery diode |
| IRU1117-33CD | IR | 800mA low dropout positive fixed 3.3V regulator |
| SD153R08S15MBV | IR | Fast recovery diode |
| IRFU5505 | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.11 Ohm, ID = -18A |
| SD103R25S10PC | IR | Fast recovery diode |
| SD103N08S15PSC | IR | Fast recovery diode |
| SD203R06S15MSC | IR | Fast recovery diode |
| IRFU220N | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 600mOhm, ID = 5.0A |
| SD103R20S20PBC | IR | Fast recovery diode |
| 200HFR80PBV | IR | Standard recovery diode |
| IRG4RC10KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A |
| IRF5804 | IR | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5V |
| PVT422P | IR | HEXFET power MOSFET photovoltaic relay |
| SD110OC04L | IR | Standard recovery diode |
| ST380C04C2L | IR | Phase control thyristor |
| ST230C12C3 | IR | Phase control thyristor |
| ST110S12P0VL | IR | Phase control thyristor |
| ST380CH04C3 | IR | Phase control thyristor |
| SD203R04S15PBC | IR | Fast recovery diode |
| IRFY440CM | IR | HEXFET power mosfet |
