| Част Не | Производител | Заявление |
|---|
| IRKDL45020S20 | IR | Standard diode |
| 309UA200 | IR | Standard recovery diode |
| IRF5Y540CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.058 Ohm, ID = 18A |
| IRF9620 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.5A |
| 25TTS08STRR | IR | Surface mountable phase control SCR |
| SD203R20S20MBC | IR | Fast recovery diode |
| PVT322S-T | IR | HEXFET power MOSFET photovoltaic relay |
| IRF630 | IR | Power MOSFET, 200V, 9A |
| IRFR3303 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.031 Ohm, ID = 33A |
| ST180C04C1 | IR | Phase control thyristor |
| IRFU6215 | IR | HEXFET power MOSFET. VDSS = -150V, RDS(on) = 0.295 Ohm, ID = -13A |
| ST300C20L1L | IR | Phase control thyristor |
| SD203N20S20PBC | IR | Fast recovery diode |
| SD233N45S50PC | IR | Fast recovery diode |
| 303U120 | IR | Standard recovery diode |
| IRGBC20MD2 | IR | Insulated gate bipolar transistor with ultrafast soft reconery diode |
| SD203R10S10MBC | IR | Fast recovery diode |
| SD253N10S15PSV | IR | Fast recovery diode |
| IRFP9240 | IR | HEXFET power MOSFET. VDSS = -200 V, RDS(on) = 0.50 Ohm, ID = -12 A |
| 70U160AYPD | IR | Standard recovery diode |
| SD453R20S30MSC | IR | Fast recovery diode |
| ST180S04M0L | IR | Phase control thyristor |
| IRFIBC30G | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A |
| ST223S04PFN1 | IR | Inverter grade thyristor |
| ST330C16L3L | IR | Phase control thyristor |
| ST2100C42R0 | IR | Phase control thyristor |
| 303UA250P3 | IR | Standard recovery diode |
| SD203R10S15MSC | IR | Fast recovery diode |
| SD400R20PSC | IR | Standard recovery diode |
| JANTX2N6806 | IR | HEXFET power mosfet |
