IRF7507 спец.: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch.

IRF7507 Подобна

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7507 Datasheet и Spec

Производител : IR

Опаковка : Micro8

Pins : 8

Температурата : Мин -55 °C | Макс 150 °C

Размер : 237 KB

Заявление : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch.