Path:OKDatasheet > Полупроводникови Datasheet > ST Microelectronics Datasheet > IRF822FI
IRF822FI спец.: N-channel enhancement mode power MOS transistor, 500V, 1.9A
IRF822FI Подобна
- IRF820
- N-channel enhancement mode power MOS transistor, 500V, 3.0A
- IRF820
- N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET
- IRF820FI
- N-channel enhancement mode power MOS transistor, 500V, 2.2A
- IRF821
- N-channel MOSFET, 450V, 2.5A
- IRF821FI
- N-channel MOSFET, 450V, 2.0A
- IRF822
- N-channel enhancement mode power MOS transistor, 500V, 2.8A
- IRF822FI
- N-channel enhancement mode power MOS transistor, 500V, 1.9A
- IRF823
- "N-channel MOSFET, 450V, 2.2A"
IRF822FI Datasheet и Spec
Производител : ST Microelectronics
Опаковка : ISOWATT220
Pins : 3
Температурата : Мин -65 °C | Макс 150 °C
Размер : 185 KB
Заявление : N-channel enhancement mode power MOS transistor, 500V, 1.9A
IRF822FI PDF Изтегли