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SP202 Подобна

  • SP201
    • "4 Watt, silicon gate enhancement mode RF power VDMOS transistor"
  • SP202
    • 8 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SP203
    • 12 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SP204
    • 15 Watt, silicon gate enhancement mode RF power VDMOS transistor

SP202 Datasheet и Spec

Производител : Polyfet RF 

Опаковка :  

Pins : 2 

Температурата : Мин -65 °C | Макс 150 °C

Размер : 39 KB

Заявление : 8 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SP202 PDF Изтегли