F1210 спец.: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Подобна

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 4

Температурата : Мин -65 °C | Макс 150 °C

Размер : 40 KB

Заявление : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor