F1060 спец.: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Подобна

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet и Spec

Производител : Polyfet RF

Опаковка :

Pins : 2

Температурата : Мин -65 °C | Макс 150 °C

Размер : 41 KB

Заявление : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor