Path:OKDatasheet > Полупроводникови Datasheet > Philips Datasheet > PHW11N50E
PHW11N50E спец.: PowerMOS transistor. Avalancne energy rated.
PHW11N50E Подобна
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- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
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- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
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PHW11N50E Datasheet и Spec
Производител : Philips
Опаковка : SOT429
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 45 KB
Заявление : PowerMOS transistor. Avalancne energy rated.
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