PHW10N40E Подобна

  • PHW10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • PowerMOS transistor. Avalancne energy rated.
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW13N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW14N50E
    • PowerMOS transistor. Avalanche energy rated.

PHW10N40E Datasheet и Spec

Производител : Philips 

Опаковка : SOT 

Pins : 3 

Температурата : Мин -55 °C | Макс 150 °C

Размер : 98 KB

Заявление : 400 V, power MOS transistor avalanche energy rated 

PHW10N40E PDF Изтегли