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PHW10N60E спец.: 600 V, power MOS transistor avalanche energy rated
PHW10N60E Подобна
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- 400 V, power MOS transistor avalanche energy rated
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- 600 V, power MOS transistor avalanche energy rated
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PHW10N60E Datasheet и Spec
Производител : Philips
Опаковка : SOT
Pins : 3
Температурата : Мин -55 °C | Макс 150 °C
Размер : 126 KB
Заявление : 600 V, power MOS transistor avalanche energy rated
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