MTD3302 Подобна

  • MTD3055EL
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055EL1
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3302
    • HDTMOS single N-channel field effect transistor

MTD3302 Datasheet и Spec

Производител : Motorola 

Опаковка : DPAK 

Pins : 4 

Температурата : Мин -55 °C | Макс 150 °C

Размер : 95 KB

Заявление : HDTMOS single N-channel field effect transistor 

MTD3302 PDF Изтегли