Path:OKDatasheet > Полупроводникови Datasheet > Motorola Datasheet > MTD3055V
MTD3055V спец.: TMOS V power field effect transistor D2PAK for surface mount
MTD3055V Подобна
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055V Datasheet и Spec
Производител : Motorola
Опаковка : DPAK
Pins : 4
Температурата : Мин -55 °C | Макс 175 °C
Размер : 226 KB
Заявление : TMOS V power field effect transistor D2PAK for surface mount
MTD3055V PDF Изтегли