Path:OKDatasheet > Полупроводникови Datasheet > Motorola Datasheet > MTB33N10E
MTB33N10E спец.: TMOS E-FET high energy power FET
MTB33N10E Подобна
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB33N10E Datasheet и Spec
Производител : Motorola
Опаковка : DPAK
Pins : 4
Температурата : Мин -55 °C | Макс 150 °C
Размер : 292 KB
Заявление : TMOS E-FET high energy power FET
MTB33N10E PDF Изтегли