Path:OKDatasheet > Полупроводникови Datasheet > Motorola Datasheet > MTB30N06VL
MTB30N06VL спец.: TMOS V power field effect transistor
MTB30N06VL Подобна
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
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- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB30N06VL Datasheet и Spec
Производител : Motorola
Опаковка : DPAK
Pins : 4
Температурата : Мин -55 °C | Макс 175 °C
Размер : 288 KB
Заявление : TMOS V power field effect transistor
MTB30N06VL PDF Изтегли