| Част Не | Производител | Заявление |
|---|
| P4KE160A | MDE Semiconductor | 136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE33A | MDE Semiconductor | 28.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-110.0C | MDE Semiconductor | 110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP6.5 | MDE Semiconductor | 6.50V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 30KW36A | MDE Semiconductor | 36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 15KP240 | MDE Semiconductor | 240V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-10D241K | MDE Semiconductor | 240V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| P4KE350A | MDE Semiconductor | 300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ6.5A | MDE Semiconductor | 6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ40 | MDE Semiconductor | 40.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE200 | MDE Semiconductor | 162.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 3KP7.0A | MDE Semiconductor | 7.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMBJ90A | MDE Semiconductor | 90.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ28A | MDE Semiconductor | 28.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE18A | MDE Semiconductor | 14.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE30A | MDE Semiconductor | 25.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ40A | MDE Semiconductor | 40.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-10D181K | MDE Semiconductor | 180V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| SA85A | MDE Semiconductor | 85.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE11A | MDE Semiconductor | 9.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25D221K | MDE Semiconductor | 220V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
