Path:okDatasheet > Полупроводникови Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-56
1.5KE200A P4KE24 SMDJ30 SMLJ45A SMLJ6.5 MDE-32D681K P4KE51 P6KE47 1.5KE12A P4KE15 MDE-10D560K 5KP14A SA90 5KP120A MAX40-40.0C 20KW30 MAX40-150.0CA 15KW260A P6KE56 MAX20-75.0CA MAX20-5.0C 30KW216A 3KP16A SA7.5 P6KE7.5A 15KW110 MDE-53D102K 15KP26A
Част Не | Производител | Заявление |
---|---|---|
MDE-14D301K | MDE Semiconductor | 300V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
SMAJ60A | MDE Semiconductor | 60.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE200A | MDE Semiconductor | 171.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
P4KE24 | MDE Semiconductor | 19.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ30 | MDE Semiconductor | 30.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ45A | MDE Semiconductor | 45.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ6.5 | MDE Semiconductor | 6.50V; 10mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-32D681K | MDE Semiconductor | 680V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
P4KE51 | MDE Semiconductor | 41.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
P6KE47 | MDE Semiconductor | 38.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
1.5KE12A | MDE Semiconductor | 10.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
P4KE15 | MDE Semiconductor | 12.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-10D560K | MDE Semiconductor | 56V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
5KP14A | MDE Semiconductor | 14.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA90 | MDE Semiconductor | 90.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
5KP120A | MDE Semiconductor | 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX40-40.0C | MDE Semiconductor | 40.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
20KW30 | MDE Semiconductor | 30.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX40-150.0CA | MDE Semiconductor | 150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
15KW260A | MDE Semiconductor | 260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
P6KE56 | MDE Semiconductor | 45.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MAX20-75.0CA | MDE Semiconductor | 75.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MAX20-5.0C | MDE Semiconductor | 5.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
30KW216A | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
3KP16A | MDE Semiconductor | 16.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA7.5 | MDE Semiconductor | 7.50V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
P6KE7.5A | MDE Semiconductor | 6.40V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KW110 | MDE Semiconductor | 110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-53D102K | MDE Semiconductor | 1000V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
15KP26A | MDE Semiconductor | 26.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |