Path:okDatasheet > Полупроводникови Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-52
D821K SMBJ8.5A 3KP8.0A MDE-40D201K SMLJ16A LCE28 SMAJ18A MDE-20D680K SMCJ48 30KW108A P4KE170A MAX40-16.0CA MDE-20D221K P6KE250A SMBJ48 1.5KE68A 15KW75A 5KP150 3KP26 SMBJ75A SMLJ120A MDE-14D680K 20KW280A 15KW43A SMLJ58A P6KE6.8.0A 1.5KE400A 1.5KE150
Част Не | Производител | Заявление |
---|---|---|
SMCJ60 | MDE Semiconductor | 60.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMCJ78 | MDE Semiconductor | 78.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-53D821K | MDE Semiconductor | 820V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
SMBJ8.5A | MDE Semiconductor | 8.50V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
3KP8.0A | MDE Semiconductor | 8.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-40D201K | MDE Semiconductor | 200V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
SMLJ16A | MDE Semiconductor | 16.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
LCE28 | MDE Semiconductor | 28.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
SMAJ18A | MDE Semiconductor | 18.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-20D680K | MDE Semiconductor | 68V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc |
SMCJ48 | MDE Semiconductor | 48.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
30KW108A | MDE Semiconductor | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P4KE170A | MDE Semiconductor | 145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MAX40-16.0CA | MDE Semiconductor | 16.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-20D221K | MDE Semiconductor | 220V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
P6KE250A | MDE Semiconductor | 202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ48 | MDE Semiconductor | 48.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE68A | MDE Semiconductor | 58.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
15KW75A | MDE Semiconductor | 75.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
5KP150 | MDE Semiconductor | 150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
3KP26 | MDE Semiconductor | 26.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMBJ75A | MDE Semiconductor | 75.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMLJ120A | MDE Semiconductor | 120.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-14D680K | MDE Semiconductor | 68V; max peak current2000A; metal oxide varistor. Standard D series 14mm disc |
20KW280A | MDE Semiconductor | 280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
15KW43A | MDE Semiconductor | 43.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMLJ58A | MDE Semiconductor | 58.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P6KE6.8.0A | MDE Semiconductor | 5.80V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
1.5KE400A | MDE Semiconductor | 342.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
1.5KE150 | MDE Semiconductor | 121.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |