Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-50

52C 1N5536D P4KE30CA 1N960 3EZ15D SMBJ5941 ES2C ZMM55-B13 SMAJ13A HA13 1N4371 P6KE110CA 1N962A P6KE33CA 1N4747A SMAJ48 1N5951 1N5915D KBPC810G UF4005 HER603 P4KE36C 1N759C P4KE39A S2D P4KE350A P6KE43C SMBJ5954B

JGD Схеми каталог-50

Част НеПроизводителЗаявление
1N4104 JGD500mW low noise silicon zener diode. Nominal zener voltage 10V.
3EZ27D5 JGD3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-5% tolerance.
ZMM5252C JGDSurface mount zener diode. Nominal zener voltage 24 V. Test current 5.2 mA. +-10% tolerance.
1N5536D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-1% tolerance.
P4KE30CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional.
1N960 JGD0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-20% tolerance.
3EZ15D JGD3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-20% tolerance.
SMBJ5941 JGD1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance.
ES2C JGD2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V.
ZMM55-B13 JGDSurface mount zener diode, 500mW. Nominal zener voltage 12.4-14.1 V. Test current 5 mA. +-2% tolerance.
SMAJ13A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V.
HA13 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 200V.
1N4371 JGD500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-10% standard tolerance.
P6KE110CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional.
1N962A JGD0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-10% tolerance.
P6KE33CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional.
1N4747A JGD1W zener diode. Zener voltage 20V.
SMAJ48 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V.
1N5951 JGD1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance.
1N5915D JGD1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-1% tolerance.
KBPC810G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
UF4005 JGDUltra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A.
HER603 JGD6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V.
P4KE36C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional.
1N759C JGD500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-2% tolerance.
P4KE39A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V.
S2D JGDSurface mount rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.5 A.
P4KE350A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V.
P6KE43C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. Bidirectional.
SMBJ5954B JGD1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-5% tolerance.

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