Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-70

5226C 1N981 SMAJ150A P4KE18CA 1EZ200D5 3EZ140D2 1N969A UF4005G P6KE400C SMBJ5935A MMBZ5256B 3EZ13D1 1N5924 HER155G KBPC310G 1N5938B ZMM5223C 1N5534C 3EZ6.2D1 SMBJ100CA 1N751A 1N5944D ZMM55-A9V1 1N5538 SMAJ16A 1N4749 MSB054 SMAJ110

JGD Схеми каталог-70

Част НеПроизводителЗаявление
1N4763A JGD1W zener diode. Zener voltage 91V.
ZMM5231C JGDSurface mount zener diode. Nominal zener voltage 5.1 V. Test current 20 mA. +-10% tolerance.
ZMM5226C JGDSurface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-10% tolerance.
1N981 JGD0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. +-20% tolerance.
SMAJ150A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V.
P4KE18CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. Bidirectional.
1EZ200D5 JGD1 watt silicon zener diode. Nominal zener voltage 200V at 1.2mA.
3EZ140D2 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-2% tolerance.
1N969A JGD0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. +-10% tolerance.
UF4005G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A.
P6KE400C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. Bidirectional.
SMBJ5935A JGD1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-10% tolerance.
MMBZ5256B JGDSurface mount zener diode. Nominal zener voltage 30.0V, test current 4.2mA.
3EZ13D1 JGD3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-1% tolerance.
1N5924 JGD1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-20% tolerance.
HER155G JGD1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V.
KBPC310G JGDSingle phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
1N5938B JGD1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-5% tolerance.
ZMM5223C JGDSurface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-10% tolerance.
1N5534C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-2% tolerance.
3EZ6.2D1 JGD3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
SMBJ100CA JGDSurface mount transient voltage suppressor. Breakdown voltage 111 V (min), 123 V (max). Test current 1.0 mA. Bidirectional.
1N751A JGD500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-5% tolerance.
1N5944D JGD1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-1% tolerance.
ZMM55-A9V1 JGDSurface mount zener diode, 500mW. Nominal zener voltage 8.5-9.6 V. Test current 5 mA. +-1% tolerance.
1N5538 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-20% tolerance.
SMAJ16A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V.
1N4749 JGD1W zener diode. Nominal zener voltage 24V. 10% tolerance.
MSB054 JGDSingle phase 0.5A glass passivated bridge rectifier. Repetitive peak reverse voltage 400V.
SMAJ110 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V.

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