Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-53
SFR1A7 S1D SMBJ5922B 1N4006L ZMM5257B 1N5540 FR102L 1N5942B SMBJ11CA 1N5939A SMAJ75C SMBJ30CA SMAJ30C SMBJ5923D HER206 SMAJ100CA 1N4735 MMBZ5244B MMBZ5241B SMAJ17A P4KE75 P4KE180A P6KE15CA BZX84C3V3 SK15 1N4627 P4KE11CA
Част Не | Производител | Заявление |
---|---|---|
1N751C | JGD | 500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-2% tolerance. |
1N979A | JGD | 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-10% tolerance. |
1N4934 | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
SFR1A7 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward current 1.0 A. |
S1D | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
SMBJ5922B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-5% tolerance. |
1N4006L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 800V. |
ZMM5257B | JGD | Surface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-5% tolerance. |
1N5540 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-20% tolerance. |
FR102L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
1N5942B | JGD | 1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-5% tolerance. |
SMBJ11CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 12.2 V (min), 13.5 V (max). Test current 1.0 mA. Bidirectional. |
1N5939A | JGD | 1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-10% tolerance. |
SMAJ75C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional. |
SMBJ30CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 36.8 V (max). Test current 1.0 mA. Bidirectional. |
SMAJ30C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. Bidirectional. |
SMBJ5923D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 8.2 V. Test current 45.7 mA. +-1% tolerance. |
HER206 | JGD | 2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
SMAJ100CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. Bidirectional. |
1N4735 | JGD | 1W zener diode. Nominal zener voltage 6.2V. 10% tolerance. |
MMBZ5244B | JGD | Surface mount zener diode. Nominal zener voltage 14.0V, test current 9.0mA. |
MMBZ5241B | JGD | Surface mount zener diode. Nominal zener voltage 11.0V, test current 20.0mA. |
SMAJ17A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. |
P4KE75 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V. |
P4KE180A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. |
P6KE15CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V. Bidirectional. |
BZX84C3V3 | JGD | 350mW zener diode, 3.3V |
SK15 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
1N4627 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 6.2V. |
P4KE11CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. Bidirectional. |