| Част Не | Производител | Заявление |
|---|
| 3EZ180D1 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-1% tolerance. |
| 1N967C | JGD | 0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-2% tolerance. |
| 1N5524A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
| 1N4006 | JGD | 1.0A silicon rectifier. Max recurrent peak reverse voltage 800V. |
| 1N982B | JGD | 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-5% tolerance. |
| 1N5938C | JGD | 1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-2% tolerance. |
| FR103G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| 1N976A | JGD | 0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-10% tolerance. |
| 3EZ13D | JGD | 3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-20% tolerance. |
| 3EZ12D4 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-4% tolerance. |
| 1N5953 | JGD | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-20% tolerance. |
| 1N4006G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 800V. |
| 3EZ4.3D2 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-2% tolerance. |
| SF31 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 3.0 A. |
| 1N976D | JGD | 0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-1% tolerance. |
| UF4007G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. |
| SMAJ64 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. |
| SF15G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| 1N5395 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
| 1N4103C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. 2% tolerance. |
| MMBZ5240B | JGD | Surface mount zener diode. Nominal zener voltage 10.0V, test current 20.0mA. |
| HER152 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SF32 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 3.0 A. |
| R1200F | JGD | High voltage fsat recovery rectifier. Max recurrent peak reverse voltage 1200 V. Max average forward rectified current 0.5A. |
| 3EZ10D10 | JGD | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-10% tolerance. |
| 1N4729C | JGD | 1W zener diode. Nominal zener voltage 3.6V. 2% tolerance. |
| SR505 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 5.0 A. |
| FR106L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N970D | JGD | 0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-1% tolerance. |
| 1N4745A | JGD | 1W zener diode. Zener voltage 16V. |
