| Част Не | Производител | Заявление |
|---|
| KBP200G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5537A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| 1N4751D | JGD | 1W zener diode. Nominal zener voltage 30V. 1% tolerance. |
| 3EZ91D2 | JGD | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-2% tolerance. |
| 3EZ5.1D5 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-5% tolerance. |
| SMBJ5927 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-20% tolerance. |
| SMBJ28C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 31.1 V (min), 38.0 V (max). Test current 1.0 mA. Bidirectional. |
| MMBD1705 | JGD | Surface mount switching diode. |
| SR305 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 3.0 A. |
| ZMM55-B22 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-2% tolerance. |
| SR508 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 5.0 A. |
| 1N5917D | JGD | 1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-1% tolerance. |
| 3EZ4.7D4 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-4% tolerance. |
| P4KE300A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. |
| 1N5940A | JGD | 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-10% tolerance. |
| KBU1008 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| P6KE16 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. |
| SMBJ5922C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-2% tolerance. |
| 1N984D | JGD | 0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-1% tolerance. |
| SMAJ90A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. |
| 1N5530A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| ZMM55-D4V3 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 4.0-4.6 V. Test current 5 mA. +-20% tolerance. |
| HA12 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMAJ10C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. Bidirectional. |
| 1N5948A | JGD | 1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-10% tolerance. |
| ZMM55-D47 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-20% tolerance. |
| SMBJ12 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 16.3 V (max). Test current 1.0 mA. |
| P6KE350CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
| KBPC804 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. |
| 1N966A | JGD | 0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-10% tolerance. |
