| Част Не | Производител | Заявление |
|---|
| KBU602G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| 1N5925C | JGD | 1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-2% tolerance. |
| 1N985C | JGD | 0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-2% tolerance. |
| P6KE13C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. Bidirectional. |
| SMBJ5925C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-2% tolerance. |
| 3EZ5.1D4 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-4% tolerance. |
| 3EZ33D5 | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-5% tolerance. |
| 1N4739A | JGD | 1W zener diode. Zener voltage 9.1V. |
| 3EZ33D2 | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-2% tolerance. |
| 1N5528A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-10% tolerance. |
| HER104L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| 3EZ6.2D3 | JGD | 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance. |
| SMAJ8.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional. |
| SMBJ5928D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 13 V. Test current 28.8 mA. +-1% tolerance. |
| SFR206 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current 2.0 A. |
| 1N5544C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| FR607G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| SMBJ5933A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-10% tolerance. |
| HER303G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ60A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
| P6KE12C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional. |
| 1N5522A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. |
| 3EZ39D1 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-1% tolerance. |
| BB814 | JGD | Surface mount switching diode. |
| 1N5941B | JGD | 1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance. |
| P4KE51C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
| 3EZ9.1D10 | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance. |
| P6KE150 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. |
| 1N991C | JGD | 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-2% tolerance. |
| HER203G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
