Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-10
6G ZMM55-C22 KBU1001 SMAJ22CA 1N757A SMAJ60A SMAJ18A 1N4741A SMBJ5946B SMAJ15C SMAJ22A HER103G SMBJ5933D DF005S P4KE51CA 1W005G P6KE51CA P4KE120 1N4753C FR603 KBPC804G 1N992C FR104L P4KE170CA 1N5519 HA16 6A05G 1N4125
Част Не | Производител | Заявление |
---|---|---|
SMBJ20C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 22.2 V (min), 27.1 V (max). Test current 1.0 mA. Bidirectional. |
1N4372C | JGD | 500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
FR206G | JGD | 2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
ZMM55-C22 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-5% tolerance. |
KBU1001 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
SMAJ22CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional. |
1N757A | JGD | 500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
SMAJ60A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
SMAJ18A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. |
1N4741A | JGD | 1W zener diode. Zener voltage 11V. |
SMBJ5946B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-5% tolerance. |
SMAJ15C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
SMAJ22A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
HER103G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
SMBJ5933D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-1% tolerance. |
DF005S | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
P4KE51CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
1W005G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
P6KE51CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
P4KE120 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. |
1N4753C | JGD | 1W zener diode. Nominal zener voltage 36V. 2% tolerance. |
FR603 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
KBPC804G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
1N992C | JGD | 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-2% tolerance. |
FR104L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
P4KE170CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
1N5519 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-20% tolerance. |
HA16 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
6A05G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 50 V. |
1N4125 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 47V. |