Path:okDatasheet > Полупроводникови Datasheet > JGD Datasheet > JGD-15

AJ58A IN5406 KBPC604 ZMM55-C39 UF5400 SK16 BZX84C43 HER301G KBPC801 MMBD1405 1N4114D 3EZ22D3 F1A4 3EZ13D4 1N5526A ZMM5251B 3EZ62D2 IN4944 ZMM55-A15 SMBJ170CA 1N5940D 1N5928D SMBJ5929B SMAJ36CA 1N4763 3EZ150D10 1N4103 ZMM55-D3V9

JGD Схеми каталог-15

Част НеПроизводителЗаявление
P6KE110 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V.
SMBJ5948C JGD1.5W silicon surface mount zener diode. Zener voltage 91 V. Test current 4.1 mA. +-2% tolerance.
SMAJ58A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V.
IN5406 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V.
KBPC604 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V.
ZMM55-C39 JGDSurface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-5% tolerance.
UF5400 JGDUltra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
SK16 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 1.0 A.
BZX84C43 JGD350mW zener diode, 43V
HER301G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V.
KBPC801 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V.
MMBD1405 JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
1N4114D JGD500mW low noise silicon zener diode. Nominal zener voltage 20V. 1% tolerance.
3EZ22D3 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-3% tolerance.
F1A4 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 400 V.
3EZ13D4 JGD3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-4% tolerance.
1N5526A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance.
ZMM5251B JGDSurface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-5% tolerance.
3EZ62D2 JGD3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-2% tolerance.
IN4944 JGD1.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.
ZMM55-A15 JGDSurface mount zener diode, 500mW. Nominal zener voltage 13.8-15.6 V. Test current 5 mA. +-1% tolerance.
SMBJ170CA JGDSurface mount transient voltage suppressor. Breakdown voltage 189 V (min), 209 V (max). Test current 1.0 mA. Bidirectional.
1N5940D JGD1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-1% tolerance.
1N5928D JGD1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-1% tolerance.
SMBJ5929B JGD1.5W silicon surface mount zener diode. Zener voltage 15 V. Test current 25.0 mA. +-5% tolerance.
SMAJ36CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional.
1N4763 JGD1W zener diode. Nominal zener voltage 91V. 10% tolerance.
3EZ150D10 JGD3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-10% tolerance.
1N4103 JGD500mW low noise silicon zener diode. Nominal zener voltage 9.1V.
ZMM55-D3V9 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-20% tolerance.

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