| Част Не | Производител | Заявление |
|---|
| IRFP360LC | IR | HEXFET power mosfet |
| 307URA200P5 | IR | Standard recovery diode |
| 301URA250P3 | IR | Standard recovery diode |
| SD300N08MSC | IR | Standard recovery diode |
| SD103R04S20PC | IR | Fast recovery diode |
| SD200N04PSC | IR | Standard recovery diode |
| IRFI520N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 7.6 A |
| SD453N25S30MC | IR | Fast recovery diode |
| SD600OC16R | IR | Standard recovery diode |
| 130HF40PV | IR | Standard recovery diode |
| IRHM8064 | IR | HEXFET transistor |
| IR2131 | IR | 3 high side and 3 low side driver |
| SD103R04S10PC | IR | Fast recovery diode |
| IRGP430U | IR | Insulated gate bipolar transistor |
| IRU1206-18CD | IR | 1A very low dropout positive fixed 1.8V regulator |
| SD203R20S10PBC | IR | Fast recovery diode |
| 309U80P5 | IR | Standard recovery diode |
| ST203C12CHH3 | IR | Inverter grade thyristor |
| SD103R12S15MSC | IR | Fast recovery diode |
| SD150R25PBC | IR | Standard recovery diode |
| ST230S14M1 | IR | Phase control thyristor |
| IRFIBF30G | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A |
| SD153N14S10MBV | IR | Fast recovery diode |
| SD253N10S20MSV | IR | Fast recovery diode |
| ST300C04L0 | IR | Phase control thyristor |
| IRF9530NS | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A |
| IRG4PSC71U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A |
| 305UA200P3 | IR | Standard recovery diode |
| ST303S10PFN0L | IR | Inverter grade thyristor |
| IRFP260N | IR | HEXFET power MOSFET. VDSS = 200 V, RDS(on) = 0.04 Ohm, ID = 50 A |
