| Част Не | Производител | Заявление |
|---|
| SD500R36PTC | IR | Standard recovery diode |
| SD203R12S10PSC | IR | Fast recovery diode |
| 40TPS12 | IR | Phase control SCR |
| ST380CH04C0 | IR | Phase control thyristor |
| ST110S16P1 | IR | Phase control thyristor |
| ST303C04HK3L | IR | Inverter grade thyristor |
| SD203R14S10MBC | IR | Fast recovery diode |
| IRFP344 | IR | HEXFET power MOSFET. VDSS = 450 V, RDS(on) = 0.63 Ohm, ID = 9.5 A |
| SD303C04S10C | IR | Fast recovery diode |
| 307U80P3 | IR | Standard recovery diode |
| SD200N08PSC | IR | Standard recovery diode |
| 301UA250 | IR | Standard recovery diode |
| ST2100C30R0L | IR | Phase control thyristor |
| IRG4PC30UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A |
| IRFZ44NSTRR | IR | N-channel power MOSFET for fast switching applications, 55V, 49A |
| IRU1205-25CL | IR | 300mA ultra low dropout positive fixed 2.5V regulator |
| 302UR120PD | IR | Standard recovery diode |
| IRLL110 | IR | N-channel MOSFET for fast switching applications, 100V, 1.5A |
| 45LF80 | IR | Standard recovery diode |
| IRG4BC20UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A |
| 72UFR120AYPD | IR | Standard recovery diode |
| SD600N04MSC | IR | Standard recovery diode |
| IRF7704 | IR | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 46mOhm, ID = -4.6A @ VGS = -10V. RDS(on) = 74mOhm, ID = -3.7A @ VGS = -4.5V. |
| 303URA160P5 | IR | Standard recovery diode |
| ST330C04C3L | IR | Phase control thyristor |
| ST173S12MFK0 | IR | Inverter grade thyristor |
| ST230S12M1V | IR | Phase control thyristor |
| SD103N25S15PC | IR | Fast recovery diode |
| IRF5Y3710CM | IR | HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.035 Ohm, ID = 18A |
| SD600N28MC | IR | Standard recovery diode |
