| Част Не | Производител | Заявление |
|---|
| SD600R32PSC | IR | Standard recovery diode |
| 45LFR5 | IR | Standard recovery diode |
| SD153N12S10PV | IR | Fast recovery diode |
| IRFP250 | IR | N-channel NEXFET, 200V, 33A |
| 16TTS12STRR | IR | Surface mountable phase control SCR |
| SD233R40S50MTC | IR | Fast recovery diode |
| 305UR120P2 | IR | Standard recovery diode |
| ST280C06C0L | IR | Phase control thyristor |
| 301UR200P2 | IR | Standard recovery diode |
| SD203N25S15MBC | IR | Fast recovery diode |
| IRF9530NL | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A |
| ST280CH06C2L | IR | Phase control thyristor |
| SD1553C28S30K | IR | Fast recovery diode |
| IRF3707 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62A |
| SD203R14S20MBC | IR | Fast recovery diode |
| IRF640NS | IR | N-channel power MOSFET for fast switching applications, 200V, 18A |
| ST333S04MFM3L | IR | Inverter grade thyristor |
| SD203R12S20PBC | IR | Fast recovery diode |
| IRFU120N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A |
| ST110S14P0L | IR | Phase control thyristor |
| SD203N08S10PC | IR | Fast recovery diode |
| ST330C04L3 | IR | Phase control thyristor |
| 307URA250P2 | IR | Standard recovery diode |
| SD103R16S10PBV | IR | Fast recovery diode |
| IRG4PC50W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.3V @ VGE = 15V, IC = 27A |
| IRF9140 | IR | HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A |
| IRFU9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A |
| IRFSL17N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A |
| SD103R20S15MC | IR | Fast recovery diode |
| SD103N08S20PBC | IR | Fast recovery diode |
