Path:OKDatasheet > Полупроводникови Datasheet > EXICON Datasheet
Ключова дума: EXICON Datasheet, EXICON Данните на листа, EXICON Схеми, EXICON
Path:OKDatasheet > Полупроводникови Datasheet > EXICON Datasheet
Ключова дума: EXICON Datasheet, EXICON Данните на листа, EXICON Схеми, EXICON
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EXICON официалния уебсайт
Част Не | Заявление |
---|---|
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
ECM-300H | 300W RMS class D audio amplifier module. |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
ECF10P25 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-20P16 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
ECM-600H | 600W RMS class D audio amplifier module. |
EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
EXICON