EC-10N20 спец.: N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.

EC-10N20 Подобна

EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.

EC-10N20 Datasheet и Spec

Производител : EXICON

Опаковка : TO3P

Pins : 3

Температурата : Мин -55 °C | Макс 150 °C

Размер : 249 KB

Заявление : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.