Path:OKDatasheet > Полупроводникови Datasheet > Alliance Datasheet > AS4LC2M8S1-10TC
AS4LC2M8S1-10TC спец.: 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC2M8S1-10TC Подобна
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC2M8S1-10TC Datasheet и Spec
Производител : Alliance
Опаковка : TSOPII
Pins : 46
Температурата : Мин 0 °C | Макс 70 °C
Размер : 783 KB
Заявление : 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC2M8S1-10TC PDF Изтегли