Path:OKDatasheet > Полупроводникови Datasheet > Alliance Datasheet > AS4LC1M16E5-50TI
AS4LC1M16E5-50TI спец.: 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
AS4LC1M16E5-50TI Подобна
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC1M16E5-50TI Datasheet и Spec
Производител : Alliance
Опаковка : plastic TSOPII
Pins : 50
Температурата : Мин -40 °C | Макс 85 °C
Размер : 664 KB
Заявление : 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
AS4LC1M16E5-50TI PDF Изтегли