TC1030EPD Подобна

TC1014-2.5VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
TC1014-2.7VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
TC1014-3.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
TC1014-3.3VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
TC1014-5.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
TC1015-2.5VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
TC1015-2.7VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
TC1015-3.0VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1030EPD Datasheet и Spec

Производител : TelCom Semiconductor

Опаковка : Plastic DIP

Pins : 14

Температурата : Мин -40 °C | Макс 85 °C

Размер : 29 KB

Заявление : Linear building block - quad low power operational amplifier.