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Shanghai Sunrise официалния уебсайт
-Късно Shanghai Sunrise PDF Datasheet
| Част Не | Заявление |
|---|---|
| P4KE51A | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 48.5 V, Vbr(max) = 53.6 V. Test current It = 1.0 mA. |
| P6KE10 | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 9.00 V, Vbr(max) = 11.0 V. Test current It = 1.0 mA. |
| P6KE110CA | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 105.0 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
| XR73-16S | Planar zener diode. Zener voltage Vz = 15.25-16.04 V. Zener current Iz = 10 mA. Power dissipation Pt = 500 mW. |
| 1.5KE180CA | Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. |
| FR102G | Glass passivated fast recovery rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
| SS22 | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 2.0 A |
| 1.5KE220A | Transient voltage suppressor. 1500 W. Breakdown voltage 209.0 V(min), 231.0 V(max). Test current 1.0 mA. |
| 2CW37-5.6B | Planar zener diode. Zener voltage Vz = 5.50-6.00 V. Zener current Iz = 5 mA. |
| 5KP7.5CA | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 8.33 V, Vbrmax = 9.21 V. Test current It = 5.0 mA. |
| KBPC3510 | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 35 A. |
| SB850 | Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 A. |
| P4KE130C | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
| 5KP8.5A | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 9.44 V, Vbrmax = 10.4 V. Test current It = 5.0 mA. |
| US2A | Surface mount ultra fast switching rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A |
| US1GB | Surface mount ultra fast switching rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 1.0 A |
| KBPC3506 | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
| P6KE180A | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
| 5KP90C | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 100 V, Vbrmax = 122 V. Test current It = 5.0 mA. |
| P4KE110C | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 99.0 V, Vbr(max) = 121 V. Test current It = 1.0 mA. |
| P4KE170CA | Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
| US2A | Surface mount ultra fast switching rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A |
| 5KP110A | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
| 1.5KE120A | Transient voltage suppressor. 1500 W. Breakdown voltage 114.0 V(min), 126 V(max). Test current 1.0 mA. |
| XR72-22U | Planar zener diode. Zener voltage Vz = 21.52-22.63 V. Zener current Iz = 5 mA. Power dissipation Pt = 500 mW. |
| P6KE36A | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 34.2 V, Vbr(max) = 37.8 V. Test current It = 1.0 mA. |
| P6KE68CA | Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 64.6 V, Vbr(max) = 71.4 V. Test current It = 1.0 mA. |
| 5KP75CA | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 83.3 V, Vbrmax = 92.1 V. Test current It = 5.0 mA. |
Shanghai Sunrise Профил
Shanhai Sunrise Electronics Co., Ltd. (SSE) was co-invested by Hua Xu Microelectronics Co., Ltd. and Winman Industry Limited, Hong Kong in 1988. We are a specialist in manufacturing high-quality diodes & rectifers with ISO 9002 approval. And we are also make relavous machinery. The annual output volume is up to 1.2 billion pieces. The factory has 400 employees in a 6000 sq.m facility. High quality, competitive prices and excellent serivecs are our key factors.Our scientific management and advanced machinery insure our perfect product quality. With more than 12 years of experience, we have establihed a reputation as an ecellent manufacturer. Our professional skills guarantee that you will receive quality in quantities. We supply top diode and rectifier to clients worldwide. Our strong R&D and produciton teams are able to provide advanced and stable technology to satisfy our clients demands. We are always ready to meet your challenge and also welcome OEM orders. We are looking forward to working with you. All inquiries will be handled with the utmost attention. Contact us for more details.